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| ICs for Mobile Communication AN6080FHN Modulator IC for CDMA system cellular telephone Overview The AN6080FHN is a modulator IC for a cellular telephone, integrating a quadrature modulator for transmitting of CDMA system for the domestic market and a gain control amplifier on a single chip. 12 13 9 Unit: mm 35 1 (0.55) R0.30 4 Seating plane 4.200.10 (4.00) (0.42) 16 2.000.10 16 5 13 12 0.50 9 8 Applications * Cellular telephone (CDMA system) 0.600.10 (0.58) 0.10 M 0.200.06 QFN016-P-0304A (Lead-free package) Block Diagram Sleep B.B GND 2nd local 12 11 10 9 I in N.C. 13 8 IX in PA GND 14 GCA 1/2 /2 7 B.B VCC GCA GND 15 6 Q in IF out 16 GCA CTRL 5 QX in 3 1 2 Gain control IF out X PA VCC GCA VCC 4 (0.33) (0.85) * Current consumption: 26 mA typ. * Wide output power control range: -8 dBm to -90 dBm * Good linearity of output power and control voltage * Small temperature dependency: 3 dB 0.10 3.000.10 (1.35) 4 1 0.200.10 (0 .1 Features 5) 0.80 max. 3.200.10 (3.00) 8 C 0. 50 Publication date: October 2002 SDM00001BEB 1 AN6080FHN Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 Description Signal output (-) Power supply (output) Power supply (GCA) Gain adjustment Q input Q input Power supply (base band) I input Pin No. 9 10 11 12 13 14 15 16 I input GND (base band) Local signal input Sleep mode changeover N.C. GND (GCA) GND (output) Signal output (+) Description Absolute Maximum Ratings Parameter Supply voltage Supply current Power dissipation *2 *1 Symbol VCC ICC PD Topr Tstg Rating 4.2 40 100 -30 to +85 -55 to +125 Unit V mA mW C C Operating ambient temperature Storage temperature *1 Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25C. *2: PD is the value at Ta = 85C without a heatsink. Use this device within the range of allowable power dissipation referring to " Technical Data * PD Ta curves of QFN016-P-0304". Recommended Operating Range Parameter Supply voltage Symbol VCC Range 2.55 to 4.00 Unit V Electrical Characteristics at Ta = 25C Unless otherwise specified, VCC = 2.8 V, VSLP = 2.8 V, SW1 = a (refer to " Application Circuit Examples"), VLO = -7.5 dBm: f = 333.7 MHz, VI , VIX , VQ , VQX (DC operating point voltage for each input) = 1.5 V, input signal is 700 kHz sine wave, amplitude 900 mV[p-p] (single phase), phase I: 0, IX: 180, Q: 90 and QX: 270. Parameter Current consumption Current consumption (sleep) Output level 1 Output level 2 Output level 3 Symbol ITOT ISLP PO(1) PO(2) PO(3) No input No input, SW1 = b Refer to " Application Circuit Examples" VGC = 1.85 V IQ input is OQPSK (based on IS-95) VGC = 1.3 V IQ input is OQPSK (based on IS-95) VGC = 0.5 V IQ input is OQPSK (based on IS-95) Conditions Min 17 -13 -47 Typ 26 0 -11 -42 -90 Max 33 10 -37 -83 Unit mA A dBm dBm dBm 2 SDM00001BEB AN6080FHN Electrical Characteristics at Ta = 25C (continued) Unless otherwise specified, VCC = 2.8 V, VSLP = 2.8 V, SW1 = a (refer to " Application Circuit Examples"), VLO = -7.5 dBm: f = 333.7 MHz, VI , VIX , VQ , VQX (DC operating point voltage for each input) = 1.5 V, input signal is 700 kHz sine wave, amplitude 900 mV[p-p] (single phase), phase I: 0, IX: 180, Q: 90 and QX: 270. Parameter Output level dependency on supply voltage In-band output deviation Carrier leak 1 Image leak 1 Gain adjustment sensitivity Gain variation range Local signal input level Sleep control (low) Sleep control (high) Gain adjustment voltage * Design reference data Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Symbol dPO PO CL1 IL1 GCA G VLO VSLP(1) VSLP(2) VGC Conditions VGC = 1.85 V, output level variation from VCC = 2.7 V to 2.9 V Level deviation at output over 1.23 MHz inband VGC = 1.8 V, IQ input operating point (DC) is no adjustment VGC = 1.8 V, IQ input operating point (DC) is no adjustment Gain variation amount from VGC = 0.5 V to 1.85 V Gain variation amount from VGC = 0.5 V to 1.85 V Voltage when ITOT becomes 10 A or less Voltage at which IC comes to operate Min -1.2 - 0.5 55 73 -17 2.3 0.1 Typ 0 0 -35 -35 60 80 -7.5 Max 1.2 0.5 -25 -25 65 -4 0.2 2.6 Unit dB dB dBc dBc dB/V dB dBm V V V Parameter Carrier leak 2 Symbol CL2 Conditions VGC = 1.8 V, -20C to 90C, When IQ input operating point (DC) is adjusted, adjustment range is within 15 mV VGC = 1.8 V, -20C to 90C, When IQ input operating point (DC) is adjusted, adjustment range is within 15 mV Min Typ -35 Max -30 Unit dBc Image leak 2 IL2 -35 -25 dBc Adjacent channel leak power suppression 1 (900 kHz detuning) ACP(1) Input is OQPSK (based on IS-95) at -13.5 dBm output (single phase) and -20C to 90C -58 -50 dBc Adjacent channel leak power ACP(2) Input is OQPSK (based on IS-95) at suppression 2 (1.98 MHz detuning) -13.5 dBm output (single phase) and -20C to 90C In-band noise 1 N(1) Noise level in center frequency 630 kHz at -28 dBm output(single phase) and -20C to 90C Noise level in center frequency 630 kHz at -76.5 dBm output(single phase) and -20C to 90C -66 -60 dBc -141 -135 dBm/Hz In-band noise 2 N(2) -165 -160 dBm/Hz SDM00001BEB 3 AN6080FHN Electrical Characteristics at Ta = 25C (continued) Unless otherwise specified, VCC = 2.8 V, VSLP = 2.8 V, SW1 = a (refer to " Application Circuit Examples"), VLO = -7.5 dBm: f = 333.7 MHz, VI , VIX , VQ , VQX (DC operating point voltage for each input) = 1.5 V, input signal is 700 kHz sine wave, amplitude 900 mV[p-p] (single phase), phase I: 0, IX: 180, Q: 90 and QX: 270. * Design reference data (continued) Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Gain deviation Rise time 1 Rise time 2 Symbol Gerr tr1 tr2 Conditions Output level deviation at 27C as reference, -20C to 90C, VGC = 0.5 V to 1.85 V Time so as to get 90% or more output when VCC , VSLP are from 0 V to 2.8 V VCC is fixed at 2.8 V Time so as to get 90% or more output when VSLP are from 0 V to 2.8 V Time so as to get 10% or less output when VCC , VSLP are from 2.8V to 0V VCC is fixed at 2.8 V Time so as to get 10% or less output when VSLP are from 2.8 V to 0 V Impedance between pin 4 and GND Impedance between each pin of pin 5, pin 6, pin 8 and 9 pin and GND VGC = 1.85 V Single phase output level at pin 16 IQ input is OQPSK (based on IS-95) VGC = 1.3 V Single phase output level at pin 16 IQ input is OQPSK (based on IS-95) VGC = 0.5 V Single phase output level at pin 16 IQ input is OQPSK (based on IS-95) Min -3 Typ 0 50 30 Max +3 100 80 Unit dB s s Fall time 1 Fall time 2 td1 td2 20 50 70 100 s s Gain adjustment pin Input impedance IQ input pin Input impedance Output level 4 ZGC ZIQ PO(4) 65 15 -10 110 21 -8 k k dBm Output level 5 PO(5) -44 -39 -34 dBm Output level 6 PO(6) -87 -80 dBm Terminal Equivalent Circuits Pin No. 1 Equivalent circuit Description Signal output (-): Output pin (reverse) of IF signal. DC voltage (V) VCC 200 23 2 Power supply (output): Power supply pin of output amplifier. Note) The characteristics listed above are theoretical values based on the IC design and are not guaranteed. 4 SDM00001BEB AN6080FHN Terminal Equivalent Circuits (continued) Pin No. 3 4 Equivalent circuit Description Power supply (GCA): Power supply pin of GCA system. DC voltage (V) 0 VCC 4 73 k 37 k Gain adjustment : Adjust the gain. The voltage from 0 V to supply voltage can be applied. 5, 6 Pin 5: Q input; Pin 6: Q input: Pin to input the Q signal (differential). Apply DC bias voltage (1.5 V) to each pin. 10.5 k 5 6 21 k 10.5 k 7 8, 9 Power supply (base band): Supply voltage pin of base band system. Pin 8: I input; Pin 9: I input: Pin to input the I signal (differential). Apply DC bias voltage (1.5 V) to each pin. 10.5 k 7 8 21 k 10.5 k 10 11 VCC 2 k 11 GND (base band): Ground pin of base band system. Local signal input: Input pin of local signal for IQ modulation. 2.7 12 150 k 12 Sleep: Operating mode: Connect this pin to supply voltage pin. Sleep mode: Connect to GND. Note) The characteristics listed above are theoretical values based on the IC design and are not guaranteed. SDM00001BEB 5 AN6080FHN Terminal Equivalent Circuits (continued) Pin No. 13 14 15 16 Equivalent circuit N.C. GND (GCA): Ground pin of GCA system. GND (output): Ground pin of output amplifier. Signal output (+): Output pin of IF signal. Description DC voltage (V) VCC 200 16 Note) The characteristics listed above are theoretical values based on the IC design and are not guaranteed. Usage Note There are three systems (pin 2, pin 3 and pin 7) of supply voltage pins in this product. Apply the same voltage at the same time to these three pins on use. (When power supply is switched to on or off, it must be done at the same time for these three pins. Never use with off for any pins.) Technical Data 1. PD Ta curves of QFN016-P-0304A PD Ta 0.600 0.584 0.500 Power dissipation PD (W) 0.400 Mounted on standard board (glass epoxy: 50 mm x 50 mm x t0.8 mm) Rth(j-a) = 171.2C/W 0.300 0.251 0.200 Independent IC without a heat shink Rth(j-a) = 397.4C/W 0.100 0.000 0 25 50 75 100 125 Ambient temperature Ta (C) 6 SDM00001BEB AN6080FHN Technical Data (continued) 2. Main characteristics (Gain control characteristics in the " Application Circuit Example Output level GC characteristics (Ta = -20C, 27C, 90C) 0 -10 -20 1. Bi-phase output circuit") Output level GC temperature characteristics (27C as reference) 10 8 Output level difference (dB) -30 6 4 2 0 -2 -4 -6 -8 Ta = 90C Ta = -20C Output level (dBm) -40 -50 -60 -70 -80 -90 -100 -110 -120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VGC (V) VGC (V) Output level GC characteristic (Bi-phase single phase output) 0 -10 -20 -30 Single phase output 3 2 Bi-phase-single phase output Bi-phase output 1 0 -1 -2 -3 -4 -5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -6 2.0 6 5 4 Balance transformer insertion loss (S21) 50 40 Bi-phase-single phase (dB) 30 -50 -60 -70 -80 -90 -100 -110 -120 0.0 Insertion loss (dB) Output (dBm) -40 20 10 0 -10 -20 -30 -40 -50 50 75 100 125 150 175 200 225 250 275 300 Marker: 167.4 MHz -3.4429 dB VGC (V) Frequency (MHz) [Balance transformer insertion loss measuring circuit] 50 10 pF 50 10 pF V Balance transformer SDM00001BEB 7 AN6080FHN Application Circuit Examples 1. Bi-phase output circuit Sleep 1 000 pF 1 000 pF 50 11 2nd local VSLP a SW1 12 VLO 50 B.B GND IQ signal source I out VI b N.C. 13 8 VIX GCA GND 14 GCA 15 1/2 /2 IX out Q out QX out 7 0.01 F B.B VCC 6 VQ 5 VQX 1 000 pF 10 PA GND IF out 16 1 2 GCA CTRL GCA VCC 3 4 0.01 F VGC Gain control 1 000 pF IF out X 1 000 pF PA VCC Balance transformer 1 000 pF ICC , ISLP 0.01 F VCC 8 POUT SDM00001BEB 3.3 F 9 AN6080FHN Application Circuit Examples (continued) 2. Single phase output circuit Sleep 2nd local 1 000 pF 50 11 1 000 pF b B.B GND VSLP a SW1 12 50 IQ signal source I out VI IX out Q out QX out 8 VIX 7 B.B VCC 0.01 F VQ VQX 6 5 1 000 pF VLO 10 N.C. 13 GCA GND 14 GCA 15 1/2 /2 PA GND IF out 1 000 pF 16 1 PA VCC 2 GCA CTRL GCA VCC 3 4 0.01 F VGC Gain control (33 + 33) nH 15 pF IF out X ICC , ISLP 0.01 F VCC POUT 3.3 F 9 SDM00001BEB 9 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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